Seeking an Engineer to lead development, testing, and validation activities for next-generation GaN power technologies, including design of experiments, failure analysis, and IP generation within a semiconductor R&D environment.Key Responsibilities:Drive GaN power technology development projects and work packages.Design and develop test structures for process control and evaluation.Perform electrical characterization of devices and screening.Conduct and coordinate physical/electrical failure analyses.Plan and assess design of experiments and process variation experiments.Participate in root cause analysis using 8D/Six Sigma methods.Collaborate on technology roadmap and innovation initiatives.Generate Intellectual Property based on R&D outcomes.Required Skills:Master's degree or higher in Electrical Engineering, Physics, or related field.5+ years in semiconductor testing, process development, or integration.Familiarity with fab systems and production processes (Si, SiC, GaN).Strong experience in project leadership and cross-functional teamwork.Hands-on with GaN HEMT technology is a strong plus.Proficient in high-volume manufacturing, reliability, and quality analysis.Skilled in structured problem-solving (e.g., 8D, Six Sigma).Excellent English communication; German language is an added advantage.
